新型Q开关晶体Cr^(4+)∶YAG的生长和退火研究  

Study on Growth and Annealing of a New Q-switching Crystal Cr^(4+) ∶YAG

作　　者：黄朝红[1] 肖敬忠[1] 秦青海[1] 王爱华[1] 殷绍唐[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所晶体材料研究室,合肥230031

出　　处：《人工晶体学报》2002年第4期405-408,共4页Journal of Synthetic Crystals

摘　　要：采用二价Ca离子作为电荷补偿离子由提拉法生长出了具有高光学质量的调Q开关晶体Cr4+ ∶YAG并对该晶体进行了退火研究。吸收光谱测量表明原生态晶体中已有少量Cr4+ 离子存在。晶体经空气中退火后Cr4+ 离子浓度和 1.0 6 μm处的吸收系数均显著提高。晶体生长和退火实验显示出晶体中Cr4+ 离子的浓度不仅取决于掺杂的Cr3 + 离子的浓度 。Cr 4+ ∶YAG crystal with high optical quality was grown by Czochralski method and divalent Ca ions were used as charge compensation ions.Furthermore,the as grown crystal was annealed in air. Absorption spectra shows that there exist a certain number of Cr 4+ ions in as grown Cr 4+ ∶YAG crystal.The Cr 4+ ion content and absorption coefficient at 1.06μm in crystal annealed in air remarkably increase.The experiments of crystal growth and annealing show that the Cr 4+ ion content in YAG is determined by not only doped Cr 3+ content but also the content proportion Ca/Cr.

关 键 词：Q开关晶体 CR^4+:YAG 研究 晶体生长 退火 吸收光谱 

分 类 号：O781[理学—晶体学]