AlN薄膜对TaN薄膜电阻器功率影响研究  

Influence of AlN Thin Film on Power of TaN Thin Film Resistors

作　　者：赵祖静 张怀武[1] 唐晓莉[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2016年第6期920-922,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50972023)

摘　　要：利用直流磁控溅射,在镍锌铁氧体基片上制作的TaN薄膜电阻器,受到铁氧体表面及内部结构特性差且导热系数低的影响,功率密度只能达到0.91 W/mm^2。利用射频磁控溅射,在铁氧体基片与薄膜电阻器间镀上1.5μm厚的AlN薄膜缓冲层,可有效改善基片的表面特性及散热能力。带AlN薄膜缓冲层的TaN薄膜电阻器的功率密度可达3.76 W/mm^2。The power density of TaN thin film resistors which are prepared on Ni-Zn ferrite substrate by DC magnetron sputtering could just reach 0.91 W/mm^2 owing to the bad surface and internal structure feature as well as the low thermal conductivity of the ferrite substrate. The AlN thin film buffer layer with thickness of 1.5 μm was plated between ferrite substrate and thin film resistors by RF magnetron sputtering. The surface feature and the heat dissipation of the substrate can be improved effectively. The power density of TaN thin film resistors with the AlN thin film buffer layer can be up to 3.76 W/mm^2.

关 键 词：磁控溅射 镍锌铁氧体基片 AlN薄膜缓冲层 TaN薄膜电阻器 功率密度 

分 类 号：TN384[电子电信—物理电子学] TM54[电气工程—电器]