SOI宽温区微型智能压力传感器的设计与实现  

Design and Implementation of SOI Wide Temperature Range Micro Intelligent Pressure Sensor

作　　者：高峰 赵建立 李静文 

机构地区：[1]南京盛业达电子有限公司,南京211161

出　　处：《自动化与仪表》2016年第12期18-22,共5页Automation & Instrumentation

摘　　要：该文首先介绍了SOI压阻式压力传感器的基本原理;其次,通过敏感芯片制备工艺、芯体的封装工艺、智能化温度补偿技术等方面的研究,设计了基于MEMS的SOI宽温区微型智能压力传感器的工艺技术;第三,详细介绍南京盛业达公司研制SOI宽温区微型智能压力传感器的结构和性能。结果表明,该产品具有宽温度工作范围、精度高、稳定性好、结构紧凑、外形美观等优良特性。Firstly,the basic principle of SOI piezoresistive pressure sensor was introduced. Secondly,through the sensi- tive chip preparation process,the core encapsulation process,intelligent temperature compensation technology,SOI wide temperature range micro intelligent pressure sensor was designed. Thirdly,the structure and properties of SOl[ wide temperature range micro intelligent pressure sensor was introduced. The product has good qualities,such as wide working temperature range,high precision,good stability,compact structure and beautiful appearance.

关 键 词：硅氧化物绝缘体 宽温区 压力传感器 工艺研究 结构性能 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]