SiO2掺杂对BCZT无铅压电陶瓷电性能的影响  

Effects of SiO2-doped in BCZT Lead-free Piezoelectric Ceramics on Electrical Properties

作　　者：张静[1] 郑德一 程程[1] 张浩[1] ZHANG Jin ZHEN De-yi CHENG Chen ZHANG Hao(Collage of material and metallurgy of Guizhou University, Guiyang,55002)

机构地区：[1]贵州大学材料与冶金学院,贵阳550025

出　　处：《功能材料与器件学报》2016年第4期69-73,共5页Journal of Functional Materials and Devices

基　　金：贵州省科技厅工业攻关项目项目编号：黔科合GY字[2013]3027

摘　　要：本文采用固相反应的方法掺杂SiO2，在1350℃烧结成功制备出了（Ba0.85，Ca0.15）（Ti0.9Zr0.1）O3-xSiO2（x=0、0．2、0．4、0．6、0．8、1．0wt．％）无铅压电陶瓷。通过采用XRD、SEM对其组织结构及显微形貌进行分析；并用相关仪器测试了样品的压电及介电性能。结果表明，通过XRD数据分析，1350℃烧结后得到的Si掺杂BCZT陶瓷可获得单一的钙钛矿结构陶瓷。SEM图像分析得出，Si掺杂可促使晶粒迅速长大，与此同时，气孔尺寸也随着掺杂量的升高而长大。当SiO2掺杂量为0．6％，烧结温度为1350℃时，陶瓷具有最优性能：d33=217pC／N，ετ=2065，tanδ=0．0166，kp=37．9％。In this paper, the solid phase reaction method , SiO2 doping （Ba0. 85 Ca0. 15 ） （Ti0.9 Zr0.1）O3 - xSiO2（x =0,0.2,0.4,0.6,0.8,1.0wt. % ） lead- free piezoelectric ceramics sintered at 1350℃, respectively, were prepared successfully by the convention method of solid reaction. And then, phase structure and micrograph of ceramic samples are analyzed by XRD and SEM. Relevant instruments test the piezoelectric and dielectric properties of the samples. The results indicate that pure perovskite structure in the Si doping BCZT ceramics sintered by 1350℃ by XRD data analysis. As is the SEM micrograph shown, Si doping largens the size of grains in ceramic. Meanwhile, the size of hole grows up with the amount of Si addition. The ceramic samples sintered at 1350% have been obtained optimum properties （d33 = 217pC/N, ετ =2065, tan δ =0.0166, kp =0.379）, while x =0.6wt%.

关 键 词：BCZT 无铅 压电陶瓷 SiO2掺杂 性能研究 

分 类 号：TB24[一般工业技术—工程设计测绘]