具有一维接触电极的双层硒化铌异质结器件制备及电学特性研究  

Fabrication and electrical heterostructure properties of bilayer NbSe2 based van der Waals with one-dimensional electrical contact

作　　者：李蕾[1,2] 邓联文[1] 刘胜[1] 杨鹏[1] 王慧山 谢红[2] 陈令修 贺立[2] 李晓良[2] 王浩敏[2] LI Lei DENG Lian-wen LIU Sheng YANG Peng WANG Hui-shan XIE Hong CHEN Ling-xiu HE Li Li Xiao-liang WANG Hao-min(School of Physics and Electronics, Hunan Key Laboratory for Super - microstructure and Ultrafast Process, Central South University, Changsha 410083, China State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 20050, China)

机构地区：[1]中南大学物理与电子学院,超微结构与超快过程湖南省重点实验室,长沙410082 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2016年第4期74-78,共5页Journal of Functional Materials and Devices

基　　金：基金项目（Foundation item）：湖南省重点实验室开放基金;国家自然科学基金（61136005）、国家重大科技专项（2011ZX02707）、中国科学院战略性先导科技专项（XDB04040300）

摘　　要：层状硒化铌晶体因其独特的电子结构和物理特性一直是科技界的研究热点，但少层硒化铌晶体薄片在空气中不稳定、器件性能退化严重等因素制约了对其深入研究。本文提出一种具有一维接触电极的双层硒化铌异质结的制备方法，在惰性环境中对硒化铌进行机械剥离、转移和封装，用标准微纳加工工艺制备了以石墨烯为一维接触电极、薄层六角氮化硼为封装材料的双层硒化铌异质结器件。结果表明：双层硒化铌器件的超导转变温度约为6．8K，电荷密度波相变温度保持在32K；超导临界电流密度为30mA／μm2，超导临界磁场为3T，性能与硒化铌晶体体材料接近；该器件在空气中电学性能非常稳定，保存数月未出现性能退化。Two-dimensional NbSe2 material has attracted significant interest for unique electronic structure and physical properties. However, few-layer NbSe2 crystal is always chemically unstable in air, which severely degrades the performance of devices. Here we report a remedial approach based on cleavage, transfer, alignment and encapsulation of air-sensitive two-dimensional crystals, all inside a controlled inert atmosphere. We prepared bilayer NbSe2 devices passivated with h-BN few-layer by using the standard micro-nano processing technology, with graphene as one-dimensional electrical contact. The results show that the device exhibits robust superconductivities with transition temperature about 6.8 K and charge-density-wave phase change happens in -32 K. Its critical current density of superconductivity is approximately 30 mA/μm2 at 2 K and critical magnetic field is beyond 3 T at 2 K. In addition, device performance of hetero-structure does not obviously degrade after storage in air for several months.

关 键 词：双层硒化铌 石墨烯 六角氮化硼 超导异质结 电学特性 

分 类 号：O513[理学—低温物理]