从双层到多层带有微结构的硅硅直接键合技术研究  

Investigation of bonding with micro structures starting from double layers to multi-layers

作　　者：袁星[1] 陶智[1] 李海旺[1] 谭啸[1] 孙加冕 

机构地区：[1]北京航空航天大学能源与动力工程学院航空发动机气动热力国家级重点实验室,北京100191

出　　处：《航空动力学报》2016年第11期2628-2634,共7页Journal of Aerospace Power

基　　金：国家自然科学基金(51506002)

摘　　要：通过理论分析和实验验证对多层带有微结构的硅硅直接键合技术进行了研究.采用的硅片表面活化处理方法是亲水湿法,采用的键合工艺流程是先将硅片在键合机中进行预键合,再使用退火炉进行高温退火.其中预键合参数对多层键合成功与否起到决定性的作用,为节约实验时间,针对3个主要预键合参数(温度、压力、时间)的选取进行了详细的正交实验分析.使用项目组自制的硅硅键合分析软件对键合片的红外图像进行处理分析,计算键合率.采用实验得到的最佳预键合工艺参数,多层键合的键合率达到了86.652 7%.The technique of multi-layers＇direct bonding with micro structures was investigated by both theoretical analysis and experimental validation.The adopted method of chemical energy activation in silicon wafer surface was hydrophilic treatment.The adopted bonding process was to firstly pre-bond wafers in bonding machine and then carry out high temperature annealing in annealing furnace.In the process,the parameters in pre-bonding procedure decided whether the bonding could succeed eventually.The three main parameters（temperature,pressure,time）in pre-bonding procedure were elaborately analyzed using orthogonal experiments,significantly reducing the time of experiments.The infrared images of bonded wafers were analyzed by silicon-silicon bonding analysis software prepared by the research group to calculate the bonding rate.Applying the best pre-bonding process parameters concluded by experiments,the bonding rate of multi-layers reached 86.652 7%.

关 键 词：多层键合 预键合 正交实验 键合分析软件 键合率 

分 类 号：V21[航空宇航科学与技术—航空宇航推进理论与工程] TN305[电子电信—物理电子学]