Synthesis of one-dimensional GaN nanorods by Tb intermediate layer with different thicknesses  

作　　者：Jin-Hua Chen Ping Shi Yu-Lan Li Xue-Lei Sun Cheng-Shan Xue Ji-Yuan Guo 

机构地区：[1]Department of Mechanical and Electrical Engineering,Zhenjiang Vocational Technical College [2]College of Physics and Electronics,Shandong Normal University [3]College of Mathematics and Physics,Jiangsu University of Science and Technology

出　　处：《Rare Metals》2016年第12期937-939,共3页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 90301002 and 90201025)

摘　　要：GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, and photo- luminescence （PL） spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthe- sizing GaN nanostructures is achieved.GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, and photo- luminescence （PL） spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthe- sizing GaN nanostructures is achieved.

关 键 词：GaN nanorods Tb intermediate layer Single crystal PHOTOLUMINESCENCE 

分 类 号：TN304.2[电子电信—物理电子学] TG453.9[金属学及工艺—焊接]