含有超晶格电子势垒的In_(0.83)Ga_(0.17)As探测器暗电流仿真和验证（英文）  

Dark current simulation and verification of In_(0.83)Ga_(0.17)As detector with superlattice electron barrier

作　　者：李庆法 李雪[1,2] 唐恒敬[1,2] 邓双燕 曹高奇 邵秀梅[1,2] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所,传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所,红外成像材料和器件重点实验室,上海200083 [3]中国科学院大学,北京100049 [4]上海科技大学物质科学与技术学院,上海201210

出　　处：《红外与毫米波学报》2016年第6期662-666,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Key Basic Research and Development Program of China(2012 CB619200);National Natural Science Foundation of China(61205105,61376052,61475179)

摘　　要：为了获得In_(0.83)Ga_(0.17)As探测器的暗电流机制,采用了TCAD软件对吸收层中含有和不含有超晶格电子势垒的p-i-n结构探测器暗电流特性进行仿真,并开展了器件验证.结果表明,超晶格势垒可以调整器件的能带结构,改变载流子传输特性,降低SRH复合,从而降低器件的暗电流,仿真结果与实验结果吻合.在此基础上,分析了势垒位置和周期变化对暗电流的影响,提出了进一步降低器件暗电流的超晶格电子势垒优化结构.To obtain the dark current mechanism of Ino.a3 Ga0.17As detector, TCAD software was used to simulate its dark current property. The detectors include two structures with and without the super lattice （SL） electronic barrier in the InGaAs absorbed layer. At the same time, the detector has been fabricated to verify the simulation resuits. The results show that SL barrier can adjust the energy band structure and change the transport property of the carriers, and thus suppress the SRH recombination and decrease the dark current. Simulation results are in good a- greement with experimental results. The influence of the location and periods of SL barrier on dark current was also simulated. The SL electronic barrier structure was optimized.

关 键 词：In0.83Ga0.17As探测器 超晶格电子势垒 暗电流 TCAD仿真 

分 类 号：TN215[电子电信—物理电子学]