红外探测器用PbSe薄膜的研究现状  

Research Status of Lead Selenide Thin Films Used for Infrared Detectors

作　　者：孙喜桂[1] 高克玮[1] 庞晓露[1] 杨会生[1] 

机构地区：[1]北京科技大学材料学院,北京10083

出　　处：《红外技术》2016年第12期1005-1019,共15页Infrared Technology

基　　金：国家自然科学基金(51271022);中央高校基本科研业务费专项资助项目(FRF-TP-14-008A2)

摘　　要：PbSe薄膜作为一种窄禁带半导体材料,因其具有优异的室温光电敏感性和响应度而被广泛用于制造硒化铅红外探测器。本文归纳和总结了PbSe薄膜的性能特点、制备工艺、后期处理工艺、理论研究方向以及国内外PbSe红外探测器的研究现状等内容,并在此基础上,探讨了PbSe红外探测薄膜材料及器件未来可能的发展方向。Lead selenide thin films are typical narrow band gap materials, which are widely used as the photosensors in the infrared detectors due to their excellent photoelectric sensitivity and responsivity even at room temperature. The typical properties, preparation technologies, post-treatment methods, theoretical researches and lead selenide infrared detectors research status of the lead selenide thin films are concluded and summarized in this paper. Besides, the future development directions of lead selenide thin films are discussed based on the conclusions.

关 键 词：PbSe薄膜 制备工艺 后处理工艺 

分 类 号：TN36[电子电信—物理电子学]