金刚石衬底的氧化钒薄膜光电特性研究  

Optical and electrical properties of vanadium pentoxide films deposited on diamond substrates

作　　者：张圣斌[1] 左敦稳[1] 卢文壮[1] 

机构地区：[1]南京航空航天大学机电学院,江苏南京210016

出　　处：《红外与激光工程》2016年第12期212-219,共8页Infrared and Laser Engineering

基　　金：国家自然科学基金(51275230);航空科学基金(20140152001);江苏省研究生培养创新工程(KYLX_0226);中央高校基本科研业务费专项资金

摘　　要：利用射频磁控溅射方法,在光学级单晶金刚石上制备了氧化钒薄膜,然后对其结构与厚度、表面形貌、电学及光学性能进行了表征。实验结果表明,制备出的薄膜表面均匀性良好,为单一组分的V2O5薄膜,在（001）面有明显的择优取向,薄膜结晶度和表面形貌非常好;电学性能方面,获得了三组不同厚度V2O5薄膜温阻特性曲线,当薄膜为150 nm时,薄膜的电学突变特性最好,电阻值变化幅度将近3个数量级;对不同厚度薄膜的光学响应特性进行了测试分析,当受到高能激光照射时,薄膜均出现了相变和回复,薄膜的光学开关时间均随着膜厚的增加而增加,其中光学关闭时间的变化范围为1.6~2.5 ms,回复时间的变化范围为26~33 ms。Vanadium oxide films（V2O5） were deposited under 35 min by RF reactive magnetron sputtering at the substrates of single-crystal diamond. Its structure, thickness, surface morphology, electrical performances and optical performances were studied. The results indicated that the deposited film is polycrystalline V2O5 film on （001） preferred orientation, possessing great crystallization behavior and the surface topography. In term of electrical performance, the V2O5 films＇ temperature-resistance characteristics were tested under three thicknesses, and the electrical mutation is best when the thickness is 150 nm. The optical-switching properties of the films were tested, and process of phase transition and recovery would occur when the films were irradiated by high-energy laser. The optical closing times range from 1.6 ms to 2.5 ms, and the response times vary from 26 ms to 33 ms, which indicate that the films＇ response time increases with the increase of film thickness.

关 键 词：V2O5薄膜 单晶金刚石 电学性能 光学特性 

分 类 号：O484.4[理学—固体物理]