高功率微波中的强流电子束技术  

Intense Electron Beam Technique for High Power Microwave System

作　　者：许建军 肖开奇 鄢振麟 Xu Jianjun Xiao Kaiqi Yan Zhenlin(Science and Technology on Electronic Information Control Laboratory, Chengdu 610036, China)

机构地区：[1]电子信息控制重点实验室,成都610036

出　　处：《电子对抗》2016年第6期40-42,共3页Electronic Warfare

摘　　要：针对高功率微波系统中强流电子束的产生，介绍了三种典型的强流电子束二极管，分析了限制强流电子柬电流的三个主要因素，针对电子柬产生器件中真空绝缘界面的沿面闪络问题，仿真研究了一种绝缘结构，仿真结果表明该绝缘结构中均压环能有效降低三结合点的电场强度，满足真空界面绝缘要求。最后根据驱动强流电子束的脉冲功率源的发展历程，介绍了几种典型的强流电子柬驱动源。Three typical intense electron beam diodes adopted in high power microwave system are introduced. The three main factors limited current in intense electron beam diode are pres- ented. Aimed at the phenomenon of vacuum surface flashover in vacuum diode, a new insula- tion structure design is proposed. The simulation results show the design with a grading ring near cathode is effective in reducing the triple junction field and satisfies the requirement of voltage hold-off. Several kinds of intense electron beam driving source are introduced according to the history of pulsed power source.

关 键 词：高功率微波 强流电子束 脉冲功率源 

分 类 号：TN31[电子电信—物理电子学]