Morphology and Structure of Nb Thin Films Grown by Pulsed Laser Deposition at Different Substrate Temperatures  

作　　者：F.Gontad A.Lorusso A.Manousaki A.Klini A.Perrone 

机构地区：[1]Department of Mathematics and Physics "Ennio De Giorgi", University of Salento, and National Institute of Nuclear Physics (INFN) [2]Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH)

出　　处：《Journal of Materials Science & Technology》2016年第11期1192-1196,共5页材料科学技术（英文版）

基　　金：supported by the Italian National Institute of Nuclear Physics(INFN);partially funded by the Italian Ministry of Research in the framework of FIRB–Fondo per gli Investimenti della Ricerca di Base(No.RBFR12NK5K)

摘　　要：This paper reports the fabrication of Nb thin films through pulsed laser deposition at different substrate temperatures, ranging from 300 to 660 K. While the variation of the substrate temperature does not affect significantly the excellent Nb thin film adhesion to the Si（100） substrate surface, the increase of the substrate temperature up to 570 K promotes an improvement of the grown film in terms of morphology and roughness. Such improvement is achieved through the formation of wider columnar structures with a reduced superficial roughness, around 5 nm, as shown by scanning electron microscopy（SEM） and atomic force microscopy. The use of temperatures over 570 K increases the substrate roughness due to the formation of irregular structures inside the film, as observed by SEM cross section analysis, and does not produce a relevant improvement on the crystalline structure of the material.This paper reports the fabrication of Nb thin films through pulsed laser deposition at different substrate temperatures, ranging from 300 to 660 K. While the variation of the substrate temperature does not affect significantly the excellent Nb thin film adhesion to the Si（100） substrate surface, the increase of the substrate temperature up to 570 K promotes an improvement of the grown film in terms of morphology and roughness. Such improvement is achieved through the formation of wider columnar structures with a reduced superficial roughness, around 5 nm, as shown by scanning electron microscopy（SEM） and atomic force microscopy. The use of temperatures over 570 K increases the substrate roughness due to the formation of irregular structures inside the film, as observed by SEM cross section analysis, and does not produce a relevant improvement on the crystalline structure of the material.

关 键 词：Pulsed laser deposition NIOBIUM Superconducting radiofrequency cavities Deposition temperature 

分 类 号：TG146.416[一般工业技术—材料科学与工程] TB383.2[金属学及工艺—金属材料]