High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors  

作　　者：Zhixin Li Dan Xie Ruixuan Dai Jianlong Xu Yilin Sun Mengxing Sun Cheng Zhang Xian Li 

机构地区：[1]Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China [2]Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China

出　　处：《Nano Research》2017年第1期276-283,共8页纳米研究（英文版）

基　　金：Acknowledgements This work was supported by the National Natural Science Foundation of China （Nos. 51672154, 51372130, and 61401251）, Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics （No. KF201517）, and Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices （No. KFJJ201402）.

摘　　要：Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide （MoS2） and single-walled carbon-nanotube （SWCNT） networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors （FETs） based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios （W/L） of the MOSR-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide （MoS2） and single-walled carbon-nanotube （SWCNT） networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors （FETs） based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios （W/L） of the MOSR-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.

关 键 词：heterogeneous inverter MOS2 single-walledcarbon-nanotube （SWCNT） high voltage gain electrical properties 

分 类 号：O[理学]