基于Si-BCB工艺Ka波段双模带通滤波器  

Ka-band dual-mode band-pass filter with Si-BCB technology

作　　者：陈雯芳[1] 孙浩[2] 方针[1] 孙晓玮[2] 

机构地区：[1]上海大学通信与信息工程学院,上海200070 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《电子测量技术》2016年第11期26-29,50,共5页Electronic Measurement Technology

基　　金：国家重大仪器项目(2012YQ14003702)资助

摘　　要：介绍了一种应用于毫米波晶圆级集成基于Si-BCB工艺的Ka波段双模带通滤波器。微带线结构的全波长谐振器具有低辐射特性,全波长环形阶跃阻抗谐振器(step impedance resonator,SIR)有两种正交谐振模式,可以减小滤波器尺寸。通过对基于环形谐振器的双模滤波器进行奇偶模分析,确定谐振器的设计参数。采用宽边耦合结构设计输入输出端口,具有高耦合度。仿真结果表明中心频率35GHz,通带内插损1.2dB,回波损耗优于30dB,BW3dB为15%。最后,采用Si-BCB工艺制作滤波器并完成测试。测试结果为中心频率33.3GHz,通带内插损1.17dB,回波损耗优于30dB,BW3dB为18%。测试结果与仿真结果基本吻合。The Ka‐band dual‐mode band pass filter applied to wafer‐level integration based on Si‐BCB technology was presented here .Full‐wave microstrip line resonator structure has the advantage of low radiation ,and full wavelength ring stepped impedance resonator has two orthogonal resonant modes ,which can reduce the size of the filter .With the analysis of the dual‐mode filter based on the ring resonator ,the design parameters of the resonator was determined .The input and output ports were realized by the broadside coupling for a high degree of coupling .Simulations show that the center frequency is 35 GHz ,and the passband insertion loss is 1 .2 dB ,besides the passband return loss is better than 30 dB .The filter was completed in the Si‐BCB technology and measured at last .The measured center frequency is 33 .3 GHz ,and the passband insertion loss and return loss are better than 1 .17 dB and 30 dB .The result matches with the simulations very well .

关 键 词：Si-BCB工艺 SIR滤波器 双模 宽边耦合 

分 类 号：TN713[电子电信—电路与系统]