溶胶-凝胶法制备CaCu_3Ti_4O_(12)薄膜及其电学特性研究  

Preparation and Electrical Properties of CaCu_3Ti_4O_(12) Thin Films by Sol-Gel Method

作　　者：高雅[1] 赵清华[1] 史建芳[1] 段倩倩[1] 李刚[1] 王开鹰[1] 

机构地区：[1]太原理工大学,太原030024

出　　处：《人工晶体学报》2016年第12期2774-2777,共4页Journal of Synthetic Crystals

摘　　要：通过溶胶-凝胶法在硅基底上制备不同烧结温度(700℃、800℃、900℃)下的CaCu_3Ti_4O_(12)(CCTO)薄膜。分别采用X射线衍射仪(XRD)和扫描电镜(SEM)对薄膜的形貌、组分和结晶状况进行表征,发现在800℃烧结温度下CCTO薄膜的结晶状况最佳。然后,采用半导体特性分析仪测试薄膜的电容-电压(C-V)特性和电流-电压(I-V)特性,得到薄膜的最大比电容和阈值电压分别为3.2μF/cm2和47 V。最后,使用台阶仪对两种浓度的先驱溶液在不同转速下所制备的薄膜厚度进行了研究。CaCu3Ti4O12 （CCTO） thin films were synthesized under the different sintering temperatures （700 ℃, 800 ℃, 900 ℃ ） by sol-gel method on silicon substrate. The morphology, phase composition and crystalline of CCTO thin films were characterized by X-ray diffraction（XRD） and scanning electron microscope（SEM） respectively. The results show that CCTO thin films has the best quality at 800 ℃. The capacitance-voltage characteristics （ C- V） and current-voltage （I- V） characteristics were tested by the semiconductor characterization analyzer, getting the largest capacitance and threshold voltage, which have values of 3.2 μF/cm2 and 47 V. Finally, the thicknesses of thin films prepared by two precursor solution at the different spin-coating speed were studied using a step profiler.

关 键 词：CACU3TI4O12 烧结温度 电学特性 薄膜厚度 

分 类 号：TQ174[化学工程—陶瓷工业]