一种高性能超低功耗亚阈值基准电压源  

A High Performance and Ultra Low Power Dissipation Voltage Reference Based on Subthreshold

作　　者：朱智勇[1] 段吉海[1] 邓进丽 韦雪明[1] 向指航 ZHU Zhiyong DUAN Jihai DENG Jinli WEI Xueming XIANG Zhihang(Guangxi Key Lab. of Precision Navigation Technology and Application, Guilin Univ. of Elec. Technol. , Guilin 541004, P. R. China)

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004

出　　处：《微电子学》2016年第6期740-745,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61161003;61264001;61166004);广西自然科学基金资助项目(2013GXNSFAA019333);广西桂林电子科技大学研究生科研创新项目(YJCXS201519)

摘　　要：设计了一种超低功耗、无片上电阻、无双极型晶体管的基于CMOS亚阈值特性的基准电压源。采用Oguey电流源结构来减小静态电流,从而降低功耗,并加入工作于亚阈值区的运算放大器,在保证低功耗的前提下,显著提高了电源电压抑制比。采用1.8V MOS管与3.3V MOS管的阈值电压差进行温度补偿,使得输出电压具有超低温度系数。采用共源共栅电流镜以提高电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行设计和仿真。仿真结果表明,在-30℃~125℃温度范围内,温漂系数为9.3×10-6/℃;电源电压为0.8~3.3V时,电压调整率为0.16%,电源电压抑制比为-58.2dB@100 Hz,电路功耗仅为109nW,芯片面积为0.01mm2。An ultra low power dissipation voltage reference based on subthreshold without resistors and BJT was presented.An Oguey current reference source was used to reduce the static current,and an operational amplifier working in subthreshold region was used to significantly increase the power supply rejection ratio（PSRR）with low power consumption.The two different threshold voltages of 1.8Vand 3.3V MOSFETs were used to get a smaller temperature coefficient.A cascode current mirror was used to increase the PSRR and reduce the line sensitivity of the circuit.The voltage reference was designed and simulated in SMIC 0.18-μm CMOS process.The simulating results for the voltage reference demonstrated that the temperature coefficient of the voltage was 9.3×10-6/℃ at the temperature range of-30℃to 125℃.The line sensitivity was 0.16% at the supply voltage range of 0.8Vto3.3V,and the PSRR was-58.2dB at 100 Hz.The power dissipation was only 109 nW,and the chip area was 0.01mm^2.

关 键 词：亚阈值区 超低功耗 低温漂 电源电压抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]