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作 者:支知渊 唐威[1] 魏海龙[1] 季赛健[1] 尤路[1] ZHI Zhiyuan TANG Wei WEI Hailong JI Saijian YOU Lu(Xi Jan Microelectronics Technology Institute, Xi'an 710065, P. R. China)
出 处:《微电子学》2016年第6期746-749,753,共5页Microelectronics
摘 要:设计了一种可修调的高精度、低温漂、高电源电压抑制比的高阶温度补偿带隙基准电压源。在Brokaw型带隙基准电路结构的基础上,采用多晶硅电阻负温度系数补偿技术,可实现2阶曲率温度补偿,减小了基准电压的温漂;设计了电阻修调网络,保证了基准电压的高精度。电路基于标准双极工艺进行设计和制造,测试结果表明:在-55℃~125℃温度范围内,15V电源电压下,基准源输出电压为2.5(1±0.24%)V,温度系数为1.2×10-5/℃,低频时的电源电压抑制比为-102dB,静态电流为1mA,重载时输出电流能力为10mA。A trimming resistive bandgap voltage reference with high precision,low temperature coefficient,high PSRR and high-order curvature compensation was presented.On the basis of Brokaw bandgap reference,a negative temperature-dependent poly resistor was used to achieve 2nd-order curvature compensation,which had reduced greatly the temperature coefficient of the reference.Trimming resistive circuits were designed to improve the precision of reference voltage.The proposed reference was designed and fabricated in a standard bipolar process.The test results indicated that the reference output voltage was 2.5(1±0.24%)V and the temperature coefficient was 1.2×10-5/℃ at 15 Vpower supply within the temperature range from-55℃ to 125℃.Furthermore,the bandgap reference had a PSRR of-102 dB at low frequency.The load current could be as high as 10 mA with the quiescent current of only 1mA.
关 键 词:带隙基准 电阻温度系数 电源电压抑制比 电阻修调
分 类 号:TN431[电子电信—微电子学与固体电子学]
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