背照式CCD量子效率的工艺仿真研究  

Process Simulation Study on Quantum Efficiency of BSI CCD

作　　者：姜华男[1] 陈捷[1] 韩恒利[1] 熊玲[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2016年第6期784-787,791,共5页Semiconductor Optoelectronics

摘　　要：使用Silvaco软件建立了背照式CCD仿真模型,利用该模型进行了工艺和器件仿真,研究了背面减薄、背面掺杂、界面陷阱和增透膜对背照式CCD量子效率的影响。仿真结果表明:界面陷阱和硅表面反射是量子效率损失的重要原因。在完全去除过渡区后,利用峰值位于表面且具有高杂质浓度梯度的背面掺杂和适当的单层增透膜,可获得峰值在90%以上的量子效率。A backside-illuminated CCD（BSI CCD）simulation model based on Silvaco TCAD was proposed.The effects of thinning,backside doping,interface traps and antireflection coatings on the quantum efficiency（QE）of backside-illuminated CCD were simulated and studied.The simulation results indicate that the significant QE loss for BSI CCD is attributed to interface traps and reflection.After removal of transition zone,accompanied with shallow,decreasing doping and monolayer antireflection coating,QE with peak value above 90% was obtained.

关 键 词：背照式CCD 背面工艺 量子效率 工艺仿真 

分 类 号：TN386.5[电子电信—物理电子学]