氧碘化学激光器腔镜表面缺陷的观察与分析  

Observation and analysis of surface defects on cavity mirror of chemical oxygen-iodine laser

作　　者：王刚[1,2] 陈真[2] 李艳娜[2] 公发全[3] 

机构地区：[1]中国科学院大学,北京100049 [2]西北核技术研究所,陕西西安710024 [3]中国科学院大连化学物理研究所,辽宁大连116023

出　　处：《光学精密工程》2016年第12期2948-2955,共8页Optics and Precision Engineering

基　　金：国防预研资金资助项目(No.201521001)

摘　　要：为了明确氧碘化学激光器腔镜损伤的原因,对腔镜表面的缺陷进行了研究。利用扫描探针显微镜观察了激光器腔镜表面缺陷,分析了腔镜表面微观形貌,讨论了常见缺陷的形状及成因。然后,建立了简化的带污染物腔镜的模型。利用COMSOL Multiphysics软件对环形光束辐照腔镜进行了仿真计算。最后,给出了缺陷大小、功率密度和腔镜表面温度的关系,分析了吸附层对腔镜熔融损伤的影响。计算结果表明:腔镜表面污染物大小不变时,激光辐照的功率密度越大,温度增长越快,薄膜表面越容易出现熔融损伤;腔镜表面污染物半径达到2.3mm时,腔镜薄膜即可出现熔融损伤。另外,吸附层吸收系数增加1%,腔镜最高温度增加约210K。本文所得结论可为分析腔镜损伤原因和制定腔镜更换依据提供参考。To figure out the causes of cavity mirror defects in a Chemical Oxygen-iodine Laser （COIL）, the surface defects on the cavity mirror were studied. A Scanning Probe Microscopy （SPM） was used to observe the surface defects on the cavity mirror, and its micro topography was analyzed. The shapes of the surface defects and the reasons why the defects appeared were discussed. Then, a simplified model of cavity mirror with defects was established. The ring beam irradiating the cavity mirror was simulated by using COMSOL Multiphysics. The relationship between the defect size, power density and the surface temperature of the cavity mirror was given and the influence of an ad- sorption layer on the melting damage of the cavity mirror was analyzed. The calculated results show that when the defect area is a constant, the larger the laser radiation power is and the faster the tem-perature grows, the more the melting damage of film surface is. Moreover, the mirror film has the possibility of melting damage at the defect radius of 2.3 mm. The absorption coefficient of the absorp- tion layer increases by 1%, then the maximum temperature of the mirror increases about 210 K. The conclusion provides a reference for the analysis of the causes of cavity mirror damage and the replace ment of the cavity mirror in the COIL system.

关 键 词：氧碘化学激光器 腔镜 表面缺陷 腔镜污染 熔融损伤 激光辐照 

分 类 号：TN248.5[电子电信—物理电子学] O484.4[理学—固体物理]