T/R组件中功放脉冲调制电路的分析与设计  

Analysis and Design of the Power Amplifier Pulse Modulation Circuit for T/R Module

作　　者：赵瑞华[1] 王振亚[1] 刘文豹[1] Zhao Ruihua Wang Zhenya Liu Wenbao(The 13th Research Institute of CETC, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团第十三研究所,石家庄050051

出　　处：《航空兵器》2016年第6期29-32,共4页Aero Weaponry

摘　　要：针对相控阵雷达T/R组件中应用广泛的GaN脉冲功率放大器,提出一种高压漏极脉冲调制电路。该电路包含高集成度的PMOS驱动器和高压PMOS管SM6103,并包含快速放电通道,该电路的输入信号为TTL信号、输出信号为+28 V脉冲信号。测试结果显示调制输出信号的上升沿小于40 ns,下降沿小于50 ns,输出电压过冲小于20%,电流驱动能力大于13 A。该脉冲调制电路结构简单、尺寸小,采用裸芯片以及铝丝键合工艺,满足T/R组件小型化的设计要求。This paper presents a kind of high-voltage drain pulse modulation circuit for Ga N pulse power amplifier which is widely used in the phased array radar T / R module. This circuit contains PMOS driver with high integration and high-voltage PMOS transistor SM6103,and contains a fast discharge channel that the input signal is TTL signal and the output signal is ＋ 28 V pulse signal. The test results show that the rising edge of the modulated output signal is less than 40 ns,the falling edge is less than 50 ns,the overshoot of output voltage is less than 20%,and the current-driving capability is greater than 13 A.The pulse modulation circuit is simple in structure and small in size,which uses bare chip and Aluminumwire-bonding process,can meet the design requirements of miniaturization for T/R module.

关 键 词：相控阵雷达 T/R组件 脉冲调制 PMOS驱动器 小型化 

分 类 号：TN722.75[电子电信—电路与系统]