电化学沉积制备纳米晶Bi-Te薄膜及其表征（英文）  

Electrochemical Deposition of Nanocrystalline Bi-Te Films and Their Characterizations

作　　者：曹一琦[1] 黄小华[1] 吴建波[1] 林燕[1] 郭仁青[1] 张胜楠[2] 

机构地区：[1]台州学院,浙江台州318000 [2]西北有色金属研究院,陕西西安710016

出　　处：《稀有金属材料与工程》2016年第12期3108-3111,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51201053);Zhejiang Province Xinmiao Talent(2013R407015)

摘　　要：采用恒电流电化学沉积工艺制备Bi-Te二元薄膜。随着沉积时间的变化,在同一个电极上依次出现了单相的Bi_2Te_3和Bi_4Te_3薄膜。其中,Bi_2Te_3薄膜是由规则的长度为100 nm左右,平均宽度为10 nm的纳米棒组成,其具有非常大的比表面积,非常有利于其作为热电材料的应用。而Bi_4Te_3薄膜是由纳米颗粒团聚而成的不规则多面体组成。研究证明通过改变沉积参数,有可能在Bi-Te二元系统的沉积过程中对生成物的相组成和形貌进行调控。Galvanostatic electrochemical processes were used to electrodeposit Bi-Te binary thin films. Single-phased Bi2Te3 and Bi4Te3 films were synthesized in turn on the same electrolyte. Bi2Te3 thin film was composed of regular nanorods with the length up to 100 nm and average width of 10 nm, which exhibits large specific areas and benefits to the application as thermoelectric（TE） materials. And the Bi4Te3 thin film is composed of nanoparticles which assembl greatly into irregular polyhedrons. The results prove that it is possible to tune the phase composition and morphology of Bi-Te binary thin films by changing the deposition parameters.

关 键 词：电化学沉积 恒电流 薄膜 热电材料 BI2TE3 纳米棒 

分 类 号：TB383.2[一般工业技术—材料科学与工程]