低辐射膜系中(Al,Ti)N薄膜的研究  

(Al,Ti) N film in low emissivity films

作　　者：仝玉莲 时方晓[1] 

机构地区：[1]沈阳建筑大学材料科学与工程学院,沈阳110168

出　　处：《材料与冶金学报》2016年第4期298-303,共6页Journal of Materials and Metallurgy

基　　金：辽宁省科技计划项目(2011222005)

摘　　要：以制备出性能优异成本低廉的低辐射镀膜玻璃为目的.通过直流磁控反应溅射技术在玻璃(或单晶硅)表面制备(Al,Ti)N薄膜作为低辐射镀膜玻璃的内层介质层,在此基础上进行单因素变量分析铝靶功率、钛靶功率、氮气流量和溅射时间对薄膜可见光透过率、表面粗糙度的影响以及测定最优条件下薄膜的结晶状态、表面形貌和元素含量.结果表明,当铝靶功率为100 W、钛靶功率为80 W、氮气流量为2.5 ml/min、溅射时间为90 min时可见光范围内透过率均在96%以上,表面粗糙度11.3 nm,膜基结合力强,膜质优异适宜低辐射镀膜玻璃功能膜的附着.In order to prepare the glass with a low emissivity film of excellent performance and lower cost , a （ Al, Ti） N film was prepared through a DC reactive magnetron sputtering technique on surface of the glass （or monocrystalline silicon ） as an inner media layer of a low - e film glass. Effects of powers of the aluminum and titanium targets, nitrogen flow and emission time on visible light transmissivity and surface roughness of the film were analyzed by a single factor variable method. The crysticallization states , surface morphology and element content of the film under the optimum conditions were determined. The results showed that when aluminum target power is 100W, titanium target power is 80W, nitrogen flow is 2. 5 ml/min and emission time is 90min, visible light transmissivity is about 96% , surface roughness is 11.3 nm. Thus the film has a strong adhesion , and an excellent quality suitable to be a low emissivity film.

关 键 词：建筑 低辐射镀膜玻璃 直流反应溅射 (Al Ti)N薄膜 

分 类 号：TU53[建筑科学—建筑技术科学] TB34[一般工业技术—材料科学与工程]