硅振荡器提高调频多普勒引信的炸高精度  

Silicon Oscillator Promote FM Doppler Fuze Burst Height Accuracy

作　　者：闫民锋 杨金钢[1] 

机构地区：[1]西安机电信息技术研究所,陕西西安710065

出　　处：《探测与控制学报》2016年第6期46-50,共5页Journal of Detection & Control

摘　　要：针对调频多普勒引信因器件的容差和环境温度的变化使信号处理输出的目标信号幅度不一致,影响引信炸高精度的问题,提出采用硅振荡器提高调频多普勒引信的炸高精度的方法。该方法用硅振荡器替代RC振荡器,振荡器电路电源、接地方式、输出端口不变,仅用一个硅集成块和一个去藕电容代替CMOS器件和电阻电容组成的RC振荡器,振荡频率由器件本身决定,不需要调试外围器件来校正输出频率。仿真和试验表明,用硅振荡器替代RC振荡器,能在保证耐高过载的前提下提高引信炸高精度。The tolerance of the electronic parts and components and the change of environmental temperature made difference between input and output signals of FM Doppler, which influenced fuze burst height accuracy. Silicon oscillator was used to promote FM Doppler fuze burst height accuracy. Simulation and experiment showed that RC oscillator was replaced by silicon oscillator could improve fuze burst hight precision on the prem-ise of high overload resistance.

关 键 词：调频多普勒引信 硅振荡器 炸高精度 

分 类 号：TJ43[兵器科学与技术—火炮、自动武器与弹药工程]