硅碳直接反应法制备超细β-SiC粉  

Preparation of Ultrafine-SiC Powder by Direct Reaction of Silicon and Carbon

作　　者：安子博[1] 汪晗[1] 竺昌海 薛俊[1] 曹宏[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,湖北武汉430074

出　　处：《武汉工程大学学报》2016年第6期560-564,共5页Journal of Wuhan Institute of Technology

基　　金：国家科技支撑计划项目(2013BAB07B05);湖北省自然科学基金项目(2014CFB788);武汉工程大学科学研究基金(K201465)

摘　　要：采用碳纳米管(CNTs)为碳源,硅粉为硅源,通过煅烧,制备出了纳米到亚微米级的超细碳化硅(SiC)粉体,研究了1 300℃、1 400℃、1 500℃三个不同的反应温度对于SiC粉体粒度的影响,讨论了SiC颗粒形成的反应机理.表征结果显示,制备的粉体物相均为β-SiC,随着反应温度的升高,粉体粒径增大.Nicomp多波形粒径分布显示,在1 300℃条件下制备的超细SiC粉体中96.4%的颗粒粒径为95.9 nm.通过分析,推测超细SiC粉的形成机理为:反应物中存在的杂质镍与硅粉在高温下形成共熔液滴,碳纳米管进入液滴反应生成SiC晶核,进而析出晶体,晶体在高温条件下不断长大,形成超细SiC粉.碳硅直接反应法相对简单、成本低,适合大规模制备纳米及亚微米级碳化硅粉体.The uhrafine silicon carbide （SIC） powder with size from nanometer to micrometer was synthesized by calcining method using carbon nanotubes （CNTs） and silicon powder as raw materials. The effect of reaction temperatures of 1 300 ℃, 1 400 ℃ and 1 500 ℃ on the particle sizes of ultra.fine SiC powder was investigated, and the formation mechanism of uhrafine SiC powder was explored. The results show that the phase compositions of ultrafine SiC powder are β-SIC. The particle size of powder increases with the temperature increasing. The Nicomp size distribution of ultrafine SiC powder show that the particle sizes of almost 96.4% ultrafine SiC powder synthesized at 1 300 ℃ are 95.9 nm. The results of test suggest that the formation mechanism of uhrafine SiC powder can be ascribed to： the nickel and silicon powder formes euteetic droplets at elevated temperature, and the CNTs enter the droplets and react with silicon to produce SiC nucleated seeds, and subsequently the uhrafine SiC powder is got with the nucleated seeds growing. The synthesized method is easy and economical, which is suitable for large-scale preparation of uhrafine SiC powder.

关 键 词：碳化硅 超细粉体 制备 

分 类 号：TB321[一般工业技术—材料科学与工程]