低电源电压带隙基准电路设计  

Design for a Low Supply Voltage Bandgap Reference Circuit

作　　者：魏榕山[1] 钟美庆 WEI Rongshan ZHONG Meiqing(School of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China)

机构地区：[1]福州大学物理与信息工程学院,福建福州350116

出　　处：《电子科技》2017年第1期34-36,45,共4页Electronic Science and Technology

基　　金：国家自然科学基金资助项目(61404030)

摘　　要：提出一种应用于低电源电压供电的带隙基准电路的解决方案。通过增加升压模块解决电流模带隙基准电路只能应用于1 V电源以上电压的难题。文中在0.8 V电源电压供电下设计带隙基准电路。对电路进行理论分析与设计,采用SMIC 0.18μm CMOS工艺模型,通过Cadence公司Spectre工具对所设计电路功能与性能进行仿真验证,仿真结果表明,在-45~125℃温度范围内,输出电压变化为2.085 mV,温漂系数为10.6 ppm达到了设计要求。A solution applied to low supply voltage current mode bandgap reference circuit that can be only booster module. This paper took a low supply voltage of 0. bandgap reference circuit was proposed. It aimed to solve applied to 1 V supply voltage problem by increasing the 8 V as an example to design the bandgap reference circuit. The SMIC 0. 18μm CMOS process model was used to design circuit and the Cadence Spectre tool was used to simulate the circuit function and performance. The simulation results showed in a temperature range of - 45 - 125℃, the output voltage variation range was 2. 085 mV, which meant the drift coefficient was 10.6 ppm.

关 键 词：带隙基准 低电源电压 升压电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]