磨料粒径对铝栅CMP去除速率和粗糙度的影响  

Effect of the Abrasive Particle Size on the Removal Rate and Surface Roughness of Aluminum Chemical Mechanical Planarization

作　　者：张金[1] 刘玉岭[1] 闫辰奇[1] 张文霞 

机构地区：[1]河北工业大学电子信息工程学院天津市电子材料与器件重点实验室,天津300130 [2]华北理工大学,河北唐山063009

出　　处：《电镀与精饰》2017年第1期29-31,39,共4页Plating & Finishing

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)

摘　　要：在铝栅化学机械平坦化(CMP)中磨料直接影响去除速率和表面粗糙度。采用不同粒径的磨料配置抛光液对铝栅进行CMP实验,对去除速率和表面形貌测试结果进行分析。结果表明,去除速率与参与抛光的磨料颗粒数目和单个颗粒去除速率有关,表面粗糙度与单个磨料颗粒机械作用和抛光后磨料颗粒表面吸附有关,并对抛光液稳定性进行了研究。最终选用粒径70 nm,质量分数为5%的磨料,去除速率可达到181 nm/min,表面粗糙度为9.1 nm,对今后铝栅CMP的研究提供了参考。During aluminium chemical mechanical Planarization,abrasives show direct effects on the removal rate and surface roughness. In this paper,CMP tests are carried out using abrasive polishing slurry with different particle size and the testing results of removal rate and surface morphology were analyzed.The results showed that removal rate was related to the abrasive particle number and single particle removal rate,while the surface roughness was related to the mechanical action of single particle as well as the surface adsorption of abrasive particles after polishing. Stability of the polishing solution was also researched. Abrasive with particle size of 70 nm and mass fraction of 5% was finally selected,using which the removal rate could reach 181 nm/min while the surface roughness was 9. 1 nm. These results provide referance to aluminum gate CMP in the future.

关 键 词：化学机械平坦化 去除速率 粒径 粗糙度 高k金属栅极 

分 类 号：TN305.2[电子电信—物理电子学]