变频和脉冲跳变双模式控制电荷泵的建模和实现  

Modeling and Realization of Variable Frequency Mode and Pulse Skipping Mode Controlled Charge Pump

作　　者：施明薇 李晴平 赵梦恋[1] 陈明阳[1] 刘胜[1] 

机构地区：[1]浙江大学超大规模集成电路设计研究所,杭州310027

出　　处：《半导体技术》2017年第1期10-16,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(LY13F040001)

摘　　要：提出了一种高性能电荷泵的建模和设计实现方法。为了实现在大的负载电流变化范围内具有高转换效率和低输出电压纹波,提出了变频模式(VFM)和脉冲跳变模式(PSM)双模式控制的电荷泵,并建立了相应的数学模型以方便设计参数的分析和选取。芯片采用TSMC0.35μm标准CMOS数模混合工艺进行设计制造,总面积约为1.4 mm×1.5 mm。测试结果表明,所设计的电荷泵在全负载电流范围内(5~100 m A)能够实现双模式的自动切换,取得较低电压纹波和较高效率,达到了设计预期,从而验证了变频和脉冲跳变双模式控制电荷泵的可行性。The modeling and implementation methods of a high-performance charge pump were proposed. In case of a wide variation of load current,to achieve high conversion efficiency and low output voltage ripple,a dual mode controlled charge pump which combines variable frequency mode（ VFM）and pulse skipping mode（ PSM） was proposed,and a corresponding mathematical model was established to help analyze and choose the design parameters. The designed chip was fabricated in TSMC0. 35 μm standard CMOS mixed-signal process with a die area of 1. 4 mm×1. 5 mm. The test results show that when the full load current ranges between 5 m A and 100 m A, the charge pump can switch automatically between the two modes and achieve low output voltage ripple and higher efficiency. The design expectations have been achieved, and thus verifying the practicability of the VFM and PSM controlled charge pump.

关 键 词：双模式控制 电荷泵 低电压纹波 高转换效率 标准CMOS数模混合工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]