电磁脉冲参数对二极管击穿特性的影响分析  

Analysis of the effect of the parameters of the electromagnetic pulse on the breakdown characteristics of the diode

作　　者：冯雪[1] 陈凯亚[1] 叶志红[1] 廖成[1] 

机构地区：[1]西南交通大学电磁场与微波技术研究所,成都610031

出　　处：《信息技术》2017年第1期9-11,共3页Information Technology

基　　金：国家重点基础研究发展规划(973计划)项目(2013CB-328904)

摘　　要：为研究电磁脉冲作用下p-n-n+型二极管的击穿及损伤情况,文中结合Si基p-n-n+型二极管,采用漂移—扩散理论结合热流方程,建立了二极管的二维电热模型。仿真结果表明,电压信号的上升时间和幅值对二极管是否击穿有直接影响,上升时间越短、初始偏压越高,则二极管越容易击穿。损伤及烧毁阈值随电压幅度的增加而升高,随上升时间的增加而降低。In order to study on the breakdown and damage characteristics of diode under the action of electromagnetic pulse,based on the p-n-n＋Si diode this paper builds a the electric heating model by combining the drift diffusion theory and the heat flux equation. The simulation results show that the rise time is and amplitude of the voltage signal have a direct effect on the breakdown of the diode,the shorter the rise time is and the higher the initial bias voltage is,the easier the breakdown of the diode is. The threshold of damage and burnout increased with the increase of the voltage amplitude and the decreased of the rise time.

关 键 词：二极管 PN结 电磁脉冲 阈值 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术]