Bi1.85In0.15Se3单晶的结构及输运特性研究  

The structure and transport properties of Bi_(1.85)In_(0.15)Se_3 single crystals

作　　者：张敏 魏占涛[2] 羊新胜[3] 

机构地区：[1]西华师范大学物理与空间科学学院,四川南充637002 [2]西南应用磁学研究所,四川绵阳621000 [3]西南交通大学超导与新能源研究开发中心,材料先进技术教育部重点实验室,成都610031

出　　处：《功能材料》2017年第1期1064-1067,共4页Journal of Functional Materials

基　　金：国家青年科学基金资助项目(51271155,51002125,51377138);四川省科技厅应用基础研究资助项目(2014JY0133);西华师范大学博士科研启动基金资助项目(412577)

摘　　要：主要研究了Bi_(1.85)In_(0.15)Se_3的晶体结构、微观形貌及电输运性能。样品具有六方层状结构,形成的晶体易解理。样品的电阻率曲线在低温区域出现了金属-绝缘体转变行为。拟合结果表明,在低温下电子-电子散射和Mott变程跃迁模式共存,Mott变程跃迁模式在低温下对电阻率贡献作用的增大,导致金属-绝缘体转变的出现;而在高温区域,声子散射及电离杂质散射对载流子的作用共存。当施加外加磁场时,样品出现了与纯Bi2Se3相反的负磁电阻效应。这种反常的磁电阻行为可能跟由洛仑兹力导致的正磁电阻与自旋无序电阻率减小引起的负磁电阻之间的竞争作用有关。The phase structure, electrical and magnetic transport properties of Bi1.85In0.15Se3 were studied. The sample with rhombohedral layered crystal structure can be cleaved easily. A metal-insulator （M-I） transition behaviour of resistivity was observed at low temperature region, which come from the contribution of the variable range transport mechanism. For high temperature region, the phonon scattering and the ionized impurities scattering effect were both existed. Magnetic-field-induced metal-insulator transitions were observed in the Bi1.85 Ino.15 Se3 sample with negative magnetoresistance （NMR）. The change in MR was related to the competition between lorentz force and the decreasing of spin disordered resistivity.

关 键 词：Bi1.85In0.15Se3 单晶 输运性能 负磁电阻效应 

分 类 号：O641.4[理学—物理化学]