Extraction of physical Schottky parameters using the Lambert function in Ni/AIGaN/GaN HEMT devices with defined conduction phenomena  

作　　者：O.Latry A.Divay D.Fadil P.Dherbécourt 

机构地区：[1]Normandie Université,UR,GPM CNRS UMR 6634,76801 St-Etienne-du-Rouvray,France

出　　处：《Journal of Semiconductors》2017年第1期95-99,共5页半导体学报（英文版）

基　　金：Project supported by the French Department of Defense(DGA)

摘　　要：Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters.The Lambert function is used to give an explicit expression of the current in the Schottky junction.This function is applied with defined conduction phenomena,whereas other work presented arbitrary（or undefined）conduction mechanisms in such parameters＇ extractions.Based upon AlGaN/GaN HEMT structures,extractions of parameters are undergone in order to provide physical characteristics.This work highlights a new expression of current with defined conduction phenomena in order to quantify the physical properties of Schottky contacts in AlGaN/GaN HEMT transistors.Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters.The Lambert function is used to give an explicit expression of the current in the Schottky junction.This function is applied with defined conduction phenomena,whereas other work presented arbitrary（or undefined）conduction mechanisms in such parameters＇ extractions.Based upon AlGaN/GaN HEMT structures,extractions of parameters are undergone in order to provide physical characteristics.This work highlights a new expression of current with defined conduction phenomena in order to quantify the physical properties of Schottky contacts in AlGaN/GaN HEMT transistors.

关 键 词：GaN Schottky junction conduction mechanisms Lambert function parameters extraction 

分 类 号：TN386[电子电信—物理电子学]