A six-junction GaAs laser power converter with different sizes of active aperture  

作　　者：SUN Yu-run 孙玉润;董建荣;何洋;赵勇明;于淑珍;薛济萍;薛驰;王瑾;陆云清;丁彦文(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Teeh and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China University of Chinese Academy of Sciences, Beijing 100049, China Zhongtian Technology Group Co. Ltd, Nantong 226009, China School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China)

机构地区：[1]Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Teeh and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Zhongtian Technology Group Co. Ltd, Nantong 226009, China [4]School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

出　　处：《Optoelectronics Letters》2017年第1期21-24,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61376065 and 61604171);Zhongtian Technology Group Co.Ltd

摘　　要：We investigate a novel Ga As-based laser power converters(LPCs) grown by metal-organic chemical vapor deposition(MOCVD),which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser,two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W,and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux,and the 4 mm sample shows a higher laser power tolerance.

关 键 词：aperture junction illumination converter diameters MOCVD sizes etching connected photovoltaic 

分 类 号：TM46[电气工程—电器] TN249[电子电信—物理电子学]