Enhanced efficiency and brightness in organic lightemitting devices with MoO_3 as hole-injection layer  

作　　者：YANG Hui-shan WU Li-shuang 杨惠山;吴丽双(College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China)

机构地区：College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China

出　　处：《Optoelectronics Letters》2017年第1期29-32,共4页光电子快报（英文版）

基　　金：supported by the Major Project of Science and Technology Office of Fujian Province of China(No.2014H0042);the Natural Science Foundation of Fujian Province of China(No.2015J01664);the Project of Science and Technology Research of Quanzhou City in Fujian Province of China(Nos.2013Z125 and 2014Z137)

摘　　要：The organic light-emitting devices(OLEDs) using 4,4',4''-tris{N-(3-methylphenyl)-N-phenylamin}triphenylamine(m-MTDATA) and MoO_3 or 1,3,5-triazo-2,4,6-triphosphorine-2,2,4,4,6,6-tetrachloride(TAPC) and MoO_3 as the hole-injection layer(HIL) were fabricated. MoO_3 can be expected to be a good injection layer material and thus enhance the emission performance of OLED. The highest occupied molecular(HOMO) of MoO_3 is between those of m-MTDATA or TAPC and N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB),which reduces the hole-injection barrier and improves the luminance of the OLEDs. The current efficiency is improved compared with that of the device without the MoO_3 layer. The highest luminous efficiency of the device with 2-nm-thick MoO_3 as HIL is achieved as 5.27 cd/A at 10 V,which is nearly 1.2 times larger than that of the device without it. Moreover,the highest current efficiency and power efficiency of the device with the structure indium-tin oxide(ITO)/TAPC(40 nm)/MoO_3(2 nm)/Tc Ta:Ir(ppy)3(10%,10 nm)/ tris-(8-hydroxyquinoline) aluminium(Alq)(60 nm)/Li F(1 nm)/Al are achieved as 37.15 cd/A and 41.23 lm/W at 3.2 V and 2.8 V,respectively.

关 键 词：tetrachloride naphthyl luminous biphenyl diphenyl diamine brightness indium aluminium thick 

分 类 号：TN383.1[电子电信—物理电子学]