Studies on the nucleation of MBE grown Ⅲ-nitride nanowires on Si  

作　　者：Yanxiong E Zhibiao Hao Jiadong Yu Chao Wu Lai Wang Bing Xiong Jian Wang Yanjun Han Changzheng Sun Yi Luo 鄂炎雄;郝智彪;余佳东;吴超;汪莱;熊兵;王健;韩彦军;孙长征;罗毅(Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China)

机构地区：Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Physics B》2017年第1期344-347,共4页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2013CB632804);the National Natural Science Foundation of China(Grant Nos.61176015,61176059,61210014,61321004,and 61307024);the High Technology Research and Development Program of China(Grant No.2012AA050601)

摘　　要：GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.

关 键 词：GaN nanowires AlN nanowires STRAIN NUCLEATION 

分 类 号：TN304[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]