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作 者:Shiwei Zhuang Deqian Xu Jiaxin Xu Bin Wu Yuantao Zhang Xin Dong Guoxing Li Baolin Zhang Guotong Du 庄仕伟;徐德前;徐佳新;伍斌;张源涛;董鑫;李国兴;张宝林;杜国同(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China)
出 处:《Chinese Physics B》2017年第1期482-487,共6页中国物理B(英文版)
基 金:supported by the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun City,China(Grant No.12ZX68)
摘 要:Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films' exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I(3-x)Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films' exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I(3-x)Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.
关 键 词:PEROVSKITE temperature-dependent photoluminescence two-step method ZNO
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