High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier  

作　　者：Feng Xu Peng Chen Fu-Long Jiang Ya-Yun Liu Zi-Li Xie Xiang-Qian Xiu Xue-Mei Hua Yi Shi Rong Zhang You-Liao Zheng 徐峰;陈鹏;蒋府龙;刘亚云;谢自立;修向前;华雪梅;施毅;张荣;郑有炓(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;Nanjing Umversity Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China)

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China [2]Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China

出　　处：《Chinese Physics B》2017年第1期488-492,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and 61334009);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,BE2015111,and BK20161324);the Program for New Century Excellent Talents in University,China(Grant No.NCET-11-0229);the Special Semiconductor Materials and Devices Research Funds from State Grid Shandong Electric Power Company,China

摘　　要：A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence（PL） properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs（76.1%） is much higher than that of InGaN/GaN MQWs（21%）.The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence（PL） properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs（76.1%） is much higher than that of InGaN/GaN MQWs（21%）.The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.

关 键 词：AlInGaN superlattices MQWs photoluminescence x-ray diffraction spectrum 

分 类 号：TN304[电子电信—物理电子学]