表面处理与p层电导率对HIT电池性能的影响  

THE EFFECT OF SILICON WAFER CLEANING PROCESS AND THE CONDUCITVITY OF p-TYPE a-Si∶H LAYER ON HIT SOLAR CELLS

作　　者：杨静[1] 陈剑辉[1] 沈艳娇 陈静伟[1] 许颖 麦耀华[1] 

机构地区：[1]河北省光电信息材料重点实验室河北大学物理科学与技术学院,保定071002

出　　处：《太阳能学报》2017年第1期201-205,共5页Acta Energiae Solaris Sinica

摘　　要：考虑到氢氟酸溶液对晶体硅表面具有去氧化和氢离子钝化表面悬键的双重作用,通过优化清洗工艺使得a-Si∶H(i)/c-Si/a-Si∶H(i)异质结构有效少子寿命达到2 ms。研究不同沉积温度对p型非晶硅薄膜电导率的影响,结合后退火发现中温(150℃)生长高温后退火的方式优于直接高温(200℃)沉积,电导率和钝化效果都有明显改善。采用优化后的p层,a-Si∶H(p^+)/a-Si∶H(i)/c-Si/a-Si∶H(i)/a-Si∶H(n^+)(inip)结构少子寿命可达3.70 ms。制备的HIT电池具有优良的性能:开路电压V_(oc)=700 mV,潜在的填充因子pFF=82%,短路电流密度Jsc=32.10 mA/m^2,填充因子FF=72.35%,转换效率η=16.26%,对比Suns-V_(oc)I-V曲线和标准条件下测试的I-V曲线计算得串联电阻,分析FF与pFF差异的原因。Due to the effect that hydrofluoric acid（HF）can both remove the oxide layer from the surface of silicon wafer and hydrogenate the dangling bond, an effective minority carrier lifetime of 2 ms has been obtained by optimizing the cleaning process in the heterostructure of a-Si： H （i）/c-Si/a-Si： H （i）. The effect of deposition temperature on the conductivity of the p-type a-Si ： H（p-a-Si）is studied. It is found that deposition of p-type a-Si： H at a moderate temperature （150 ℃ ）followed by an annealing process at a relatively high temperature （200 ℃, for instance）allows higher conductivity and better surface passivation of silicon wafer than the deposition directly at high temperature of 200 ℃. An effective minority carrier lifetime up to 3.7 ms is attained with the structure of p-a-Si/a-Si ： H （i）/c-Si/a-Si： H （i）/n-a-Si by optimizing the p-a-Si： H layer. Finally, solar cell with higher performance （V∝=700 mV, pFF=82%, J∝ =32.10 mA·cm^-2, FF=72.35%, η=16.26%） is presented. The difference between FF and pFF has been analyzed via comparing standard I-V curve with pseudo I-V curve. Keywords ： surface treatment ; amorphous silicon ; surface passivation; HIT solar cell; seriesresistance.

关 键 词：表面处理 非晶硅 钝化 HIT电池 串联电阻 

分 类 号：TM914.41[电气工程—电力电子与电力传动]