基于曲率补偿技术的带隙基准电路设计  

Design of the Bandgap Reference Circuit Based on the Curvature Compensation Technique

作　　者：庞英俊 崔椿洪 陈昊 Pang Yingjun Cui Chunhong Chen Hao(State Grid Power Supply Company Wuhu, Wuhu 247100, China)

机构地区：[1]国网安徽省芜湖供电公司,安徽芜湖247100

出　　处：《半导体技术》2017年第2期97-102,共6页Semiconductor Technology

摘　　要：提出了一种新的曲率补偿带隙基准电路,首先通过一个双差分输入放大器(DDIA)来产生一个绝对温度互补电压。然后通过这个电压与另一个DDIA对曲率补偿进行微调,得到一个高阶曲率补偿的带隙基准电压。采用0.5μm CMOS工艺技术对文中所设计的电路进行流片验证,得到在-40~125℃内,带隙基准电压源的温度系数为4.1×10-6/℃,当电源电压在2.7~5 V时,带隙基准电路的输出电压稳定在1.3 V左右。此外,该电路具有较高的电源抑制比(PSRR),当频率小于1 k Hz时,其电源抑制比为-82 d B,而当频率在10 k Hz时,其电源抑制比为-75 d B。A new curvature compensated bandgap reference circuit was proposed. Firstly a dual-differential input amplifier（DDIA） was used to generate an absolute temperature complementary voltage.Then the voltage and another DDIA were used for the fine tuning of the curvature compensation,to obtain a high-order curvature compensated bandgap reference voltage. The proposed bandgap reference circuit was verified by the 0. 5 μm CMOS process,which shows that a temperature coefficient of 4. 1 × 10-6/℃was obtained in the temperature range from-40 ℃ to 125 ℃. And when the power supply voltage is from2. 7 V to 5 V,the output voltage of the bandgap reference circuit is stable at about 1. 3 V. In addition,the circuit has the higher power supply rejection ratio（PSRR）. The PSRRs are-82 d B and-75 d B when the frequencies are less than 1 k Hz and at 10 k Hz,respectively.

关 键 词：带隙基准电路 高阶曲率补偿 互补金属氧化物半导体(CMOS) 温度系数 电源抑制比(PSRR) 

分 类 号：TN432[电子电信—微电子学与固体电子学]