用于高压快恢复二极管的200mm硅外延材料的生长  

Growth of 200 mm Silicon Epitaxial Material for High-Voltage Fast Recovery Diode

作　　者：张志勤[1] 吴会旺[1] 袁肇耿[1] 赵丽霞[1] Zhang Zhiqin Wu Huiwang Yuan Zhaogeng Zhao Lixia(Silicon Base Epitaxial Material Engineering Technology Research Center of Hebei Province, Hebei Poshing Electronics Technology Co., Ltd., Shijiazhuang 050200, Chin)

机构地区：[1]河北普兴电子科技股份有限公司河北省硅基外延材料工程技术研究中心,石家庄050200

出　　处：《半导体技术》2017年第2期129-133,159,共6页Semiconductor Technology

摘　　要：1 200 V快恢复二极管(FRD)器件用200 mm外延片由于直径较大、外延层较厚(约130μm)以及电阻率较高(约60Ω·cm),外延层滑移线、电阻率不均匀性和缓冲层过渡区不易控制。通过在水平板式炉上进行工艺优化实验,采用900℃恒温工艺,外延层滑移线总长由原来的约90 mm降低至约15 mm。采用氢气变流量赶气工艺,外延层电阻率不均匀性由原来的约5%提升至小于3%。缓冲层结构生长之前,预生长本征覆盖层(帽层)可以降低缓冲层的过渡区宽度,由10μm降低至5μm,改善了缓冲层的有效厚度,同时也可以降低缓冲层的电阻率不均匀性,由2.5%降低至1.1%。以上措施的实施,满足了1 200 V FRD器件的材料指标要求,外延片出货量大幅度增加,提升了产业化水平。Due to larger diameter,thicker epitaxial layer（about 130 μm） and higher resistivity（about 60 Ω·cm）,the 200 mm epitaxial wafer for 1 200 V fast recovery diode（FRD） device is difficult to control the slip line of the epitaxial layer,non-uniformity of resistivity and the buffer layer transition zone. Through the process optimization experiment on the horizontal plate furnace, by using the900 ℃ heat preservation technology,the total length of the slip line of the epitalxial layer is decreased from about 90 mm to about 15 mm. By using the hydrogen variable flow purge process,the non-uniformity of the epitaxial layer resistivity is reduced from about 5% to less than 3%. Before the buffer layer growth,pre-growth of the intrinsic coating layer（cap layer） can reduce the transition zone width of the buffer layer from 10 μm to 5 μm,which improves the effective thickness of the buffer layer. At the same time,the resistivity non-uniformity of the buffer layer is also decreased from 2. 5% to 1. 1%. Through the implementation of the above methods,the 1 200 V FRD device material requirements are met,the epitaxial wafer shipments are increased significantly and the industrialization level is enhanced.

关 键 词：快恢复二极管(FRD) 外延 滑移线 电阻率 不均匀性 缓冲层 

分 类 号：TN304.054[电子电信—物理电子学]