检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:张楠[1] 张保[1] 杨美音[1] 蔡凯明 盛宇[1,2] 李予才 邓永城[1] 王开友[1] Zhang Nan Zhang Bao Yang Mei-Yin Cai Kai-Ming Sheng Yu Li Yu-Cai Deng Yong-Cheng Wang Kai-You(State Key Laboratory of Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083, China Department of Physics, University of Science and Technology Beijing, Beijing 100048, China)
机构地区:[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [2]北京科技大学物理系,北京100048
出 处:《物理学报》2017年第2期1-10,共10页Acta Physica Sinica
基 金:国家重点基础研究发展计划(批准号:2014CB643903);国家自然科学基金(批准号:61225021;11174272;11474272)资助的课题~~
摘 要:电学方法调控磁性材料及器件的磁性是当前自旋电子学研究的热点之一.本综述简要介绍利用电学方法调控磁化翻转和磁畴壁运动的研究进展.首先简述了自旋极化电流的产生、自旋流与局域磁矩之间的作用原理以及对应的Landau-Lifshitz-Gilbert-Slonczewski磁动力学方程;然后分别讨论了单层磁性材料、铁磁层/重金属、铁磁层/非磁金属/铁磁层等不同结构中的电流诱导磁化翻转或驱动畴壁运动;最后介绍了利用压电效应、磁电耦合效应和栅极电场效应三种电压方式对磁矩的调控.在此基础上,对电学方法调控磁化翻转和磁畴壁运动进行了总结和展望.Electrical control of spins in magnetic materials and devices is one of the most important research topics in spintronics. We briefly describe the recent progress of electrical manipulations of magnetization reversal and domain wall motion. This review consists of three parts: basic concepts, magnetization manipulation by electrical current and voltage methods, and the future prospects of the field.The basic concepts, including the generation of the spin current, the interaction between the spin current and localized magnetization, and the magnetic dynamic Landau-Lifshitz-Gilbert-Slonczewski equation are introduced first.In the second part, we reviewed the progress of the magnetization controlled by electrical current and voltage.Firstly we review the electrical current control of the magnetization and domain wall motion. Three widely used structures, single-layer magnets, ferromagnet/heavy metal and ferromagnet/nonmagnetic metal/ferromagnet, are reviewed when current is used to induce magnetization reversal or drive domain wall motion. In a single-layer magnetic material structure, domain wall can be effectively driven by electrical current through spin transfer torque. The factors influencing the domain wall trapping and motion are also discussed. The electrical current control of the skyrmions has big potential applications due to much lower current density. Using the Dresselhaus and Rashba spin orbital coupling, the electrical current can also directly reverse the magnetization of single magnetic or antiferromagnetic layer. Then, we review the electrical current switching the magnetization of the ferromagnetic layer in ferromagnetic/heavy metal structures, where both spin Hall effect and Rashba effect can contribute to the current switching magnetization in such device structures.To identify the relative contributions of these two mechanisms, several quantitative studies are carried, concluding that spin Hall effect plays a major role, which is summarized in this review. Finally, we review the current switc
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117