Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition  

作　　者：Sheng-Rui Xu Ying Zhao Ren-Yuan Jiang Teng Jiang Ze-Yang Ren Jin-Cheng Zhang Yue Hao 许晟瑞;赵颖;蒋仁渊;姜腾;任泽阳;张进成;郝跃(Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071, China)

机构地区：Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi＇ an 710071, China

出　　处：《Chinese Physics B》2017年第2期467-472,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61204006 and 61574108);the Fundamental Research Funds for the Central Universities,China(Grant No.7214570101)

摘　　要：High indium semipolar（1122） and polar（0001） In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface（1122）is larger than that of the surface（0001）, which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the（0001） surface with island-like morphology shows inhomogeneous indium incorporation, while the（1122） surface with a spiral-like morphology shows a better homogeneous In composition.This feature is also demonstrated by the monochromatic cathodoluminescence map.High indium semipolar（1122） and polar（0001） In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface（1122）is larger than that of the surface（0001）, which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the（0001） surface with island-like morphology shows inhomogeneous indium incorporation, while the（1122） surface with a spiral-like morphology shows a better homogeneous In composition.This feature is also demonstrated by the monochromatic cathodoluminescence map.

关 键 词：semipolar GaN MOCVD 

分 类 号：TN304.055[电子电信—物理电子学]