基于负载牵引测试的X波段GaN功放设计  

Design of Ga N power amplifier based on load-pull measurement

作　　者：李子文[1,2] 谢义方[2] 姜亚祥[2] LI Zi-wen XIE Yi-fang JIANG Ya-xiang(University of Chinese A cademy of Sciences, Beijing 100049, China National Space Science Center CAS, Beijing 100190, China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院国家空间科学中心,北京100190

出　　处：《电子设计工程》2017年第3期100-103,共4页Electronic Design Engineering

摘　　要：文中介绍了X波段Ga N功率放大器的设计。通过负载牵引测试的方式找到了Ga N器件SGK7785-30A的最佳工作阻抗,并基于该阻抗值完成了电路的匹配设计。文中首先给出了X波段Ga N功放的整体设计方案,其次详细介绍了负载牵引测试系统和测量过程中的关键技术,最后介绍了单级电路的设计要点。功放在8.0 GHz连续波情况下,输出30.77 W功率,功率附加效率超过30%,7.9~8.1 GHz范围内增益平坦度小于0.5 d B。This paper introduces the design of X-band GaN power amplifier. By load-pull measurements of GaN devices SGK7785-30A,we found the optimum impedance, based on which we implemented the matching design of the circuit. This paper first shows the overall design of X-band GaN power amplifier, secondly introduces the load-pull measurement system and key technology in the process of measurement in detail, finally introduced the key design points of single-stage circuit.The PA achieves 30.77W output power with the PAE over 30%, while its gain flatness less than 0.5 dB from 7.9-8.1 GHz.

关 键 词：GaN功放 负载牵引 TRL校准件 偏置电路 

分 类 号：TN722[电子电信—电路与系统]