高温碲镉汞中波红外探测器的国内外进展  

Review of HOT MW Infrared Detector Using MCT Technology

作　　者：周连军[1] 韩福忠[1] 白丕绩[1] 舒畅[1] 孙皓[1] 王晓娟[1] 李京辉[1] 邹鹏程[1] 郭建华[1] 王琼芳[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2017年第2期116-124,共9页Infrared Technology

摘　　要：介绍了欧美发达国家在高工作温度碲镉汞中波红外探测器上的工艺技术路线及典型产品技术指标。对昆明物理研究所研制的基于标准n-on-p(Hg空位掺杂)工艺的中波640×512(15μm)探测器进行了高工作温度性能测试,测试结果显示器件性能基本达到国外产品的同期研制水平。Several kinds of technology roadmap process and technical specifications of typical product for HOT （high operating temperature） HgCdTe MW infrared detector from Euramerican developed countries are reviewed in this paper. A 640 ×512（15μm） MW detector that was manufactured by Kunming Institute of Physics based on the standard n-on-p（Hg vacancy doped） process production output was selected for detailed HOT testing. The results prove that the performance of our detector basically reaches the level of foreign products developed in the same period.

关 键 词：碲镉汞 高工作温度 红外探测器 标准n-on-p工艺 

分 类 号：TN215[电子电信—物理电子学]