单晶硅快速磷扩散研究  

Investigation on monocrystalline silicon quickly phosphorus diffusion

作　　者：孔凡迪[1] 陈诺夫[1] 陶泉丽 贺凯[1] 王从杰[1] 魏立帅[1] 白一鸣[1] 陈吉堃[2] 

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]北京科技大学材料科学与工程学院,北京100083

出　　处：《功能材料》2017年第2期2091-2095,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61006050;61076051);北京市自然科学基金资助项目(2151004);中央高校基本科研业务费专项基金资助项目(13ZD05);中央高校基本科研专项资金资助项目(2016MS50)

摘　　要：采用传统方法向晶体硅中扩磷不仅耗时长,而且能耗多。使用快速热处理(RTP)方法可以在数十秒时间内达到磷扩散深度和浓度的要求,具有广阔前景。使用磷纸作为扩散源,结合快速热处理法对p型单晶硅片进行磷扩散,用磨角染色法探究扩散结深,获得了最为理想的p-n结扩散温度及时间。通过计算快速热处理条件下磷在硅中的扩散系数以及扩散激活能,分析了与传统扩散方法不同的原因。It takes long time to diffuse phosphorus into crystalline silicon by conventional method, and it is a high-energy progress. But it can be achieved in tens of seconds by using rapid thermal progress （RTP）. This method has a prosperity prospect. In this paper, phosphorus diffusion into p-type monocrystalline silicon wafer was carried out by using the strategy combined phosphorus paper with rapid thermal progress. Then the p-n junction depth was explored by using angle lapping and staining technique in order to obtain the best diffusion temperature and time. Finally, the diffusion coefficient and diffusion activation energy of phosphorus in silicon by RTP were calculated, and the reason of difference between RTP and conventional method was analyzed.

关 键 词：半导体材料 P-N结 快速热处理 磷扩散 扩散系数 

分 类 号：O475[理学—半导体物理] TM914.41[理学—物理]