大功率半导体激光器可靠性研究和失效分析  

Reliability Test and Failure Analysis of High Power Semicounductor Laser

作　　者：王文知[1] 井红旗[1] 祁琼[1] 王翠鸾[1] 倪羽茜 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083

出　　处：《发光学报》2017年第2期165-169,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61306057)资助项目~~

摘　　要：对自主研发的975 nm波长的COS封装的大功率半导体单管激光器进行了10,12,14 A的电流步进加速应力试验,应用逆幂律模型和指数分布的理论对试验结果进行了分析,计算出在8 A的电流下,器件的平均寿命为28 999 h。研究了器件的失效形式和老化前后的温升、偏振度的变化,结果表明:失效形式主要有体内退化、腔面退化、与焊接有关的退化;老化后的器件的结温上升增多,偏振度下降10%左右。The current step accelerated stress tests were carried out at 10,12,14 A for 975 nm high power semiconductor laser which is packaged with the way of COS. The test results were analyzed by using the inverse power law model and the exponential distribution theory. The average life of the device is 28 999 h under the current of 8 A. The high power semiconductor laser’s failure and the change of temperature rise and the degree of polarization before and after aging were also studied.The results show that the main failure is internal degradation,deterioration of the cavity surface,and welding related degradation. The junction temperature of device after aging is higher,and the degree of polarization decreases about 10%.

关 键 词：可靠性 步进加速应力 指数分布 

分 类 号：TN248.4[电子电信—物理电子学] TN306