一种升压转换器的新型片内补偿设计  

Design of a Novel On-Chip Compensation for Boost Converter

作　　者：崔庆[1,2] 王磊[1,2] 刘迪军 林福江[1] 

机构地区：[1]中国科学技术大学电子科学与技术系,合肥230027 [2]联芯科技有限公司,北京100000 [3]电信科学技术研究院无线移动通信国家重点实验室,北京100191

出　　处：《微电子学》2017年第1期63-66,共4页Microelectronics

基　　金：国家青年科学基金资助项目(61204033)

摘　　要：提出一种新的升压转换器环路补偿方法。通过增加一个运算放大器,实现了补偿电容的倍增,使用片内小电容就可以实现环路稳定性设计,无需片外补偿电容。采用TSMC 0.13μm BCD工艺进行设计并流片,测试结果显示,输入4V,输出5V的条件下,在整个CCM负载范围内,开关频率为1.46 MHz,内部补偿电路工作正常,输出电压稳定,无振荡,与设计仿真值相符。A novel low-cost frequency compensation had been used to multiply the compensation capacitor, method for boost converter was proposed. An extra op amp hence the required capacitance of the compensation capacitor had been decreased. And off-chip capacitor was not necessary any more. It＇s designed and fabricated in TSMC 0. 13 μm BCD process. Test results showed that the switching frequency was 1.46 MHz, the internal compensation circuit worked properly and the output voltage was stable within the entire CCM load range at a test condition of 4 V input and 5 V output. It was conforming to the simulated results.

关 键 词：同步升压转换器 环路补偿 零极点 电容倍增 

分 类 号：TN433[电子电信—微电子学与固体电子学]