与标准Si工艺兼容的光电探测器的研制  

Fabrication of photodetector by compatible standard Si process

作　　者：徐攀[1] 程翔[1] 李继芳[1] 郑明[1] 楼卓格 卢杭全 史晓凤[2] 任雪畅[3] 

机构地区：[1]厦门大学航空与航天学院,福建厦门361005 [2]阜阳师范学院计算机与信息工程学院,安徽阜阳236037 [3]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《光电子．激光》2017年第2期138-142,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61205060);安徽省高校省级自然科学基金(2014KJ022);安徽省自然科学基金(608085QF159);厦门大学校长基金(中央高校基本科研业务费专项资金)(20720160016)资助项目

摘　　要：提出采用Si基标准工艺进行研制与标准工艺兼容的光敏三极管,重点解决光敏三极管结构与标准工艺兼容性问题,并实现对其结构、性能的优化设计。通过CADENCE软件,画出不同光敏三极管的版图;根据华润上华(CSMC)Si基标准工艺流程,采用器件模拟软件Silvaco,对光敏三极管结构进行构建和仿真;基于理论分析结果,通过设计改变结构优化光敏三极管性能。采用CSMC标准Si工艺,实现了基区面积分别为40μm×40μm、50μm×100μm、80μm×100μm和100μm×100μm光敏三极管的流片、封装和测试。结果显示,所设计的光敏三极管的响应度达到2.02A/W,放大倍数β达到60倍,最大带宽达到50 MHz左右。并且,标准Si工艺的低成本和放大集成电路的兼容性,使得制备的光敏三极管可以广泛适用于快速光耦合器、光数据接收器等应用领域。In this paper, we adopt standard Si-based process to develop a phototransistor which is compat- ible with the standard process, and solve the compatibility problems between the structure of phototran- sistor and standard processes. Furthermore,we achieve the optimal design of its structure and properties. According to standard Si-based process from CSMC, based on the theoretical analysis, we adopt Silvaco to build and simulate the phototransistor by changing the structure of it. After packaging and testing, the phototransistors with the base areas of 40μm×40μm、50μm×100tim、80μm×100μm and 100μmX100μmare achieved. The experimental results show that the performance of the designed photosensitive transistor is good. The responsivity can reach 2. 02 A/W, magnification factor can be up to 60, and the maximum bandwidth can reach as high as 50 MHz. Furthermore,the low cost and compatibility of stand- ard Si process make it suitable for fast optical coupler,optical data receivers and other optical devices.

关 键 词：集成光电子技术 光电探测器 标准Si工艺 响应度 

分 类 号：TN491[电子电信—微电子学与固体电子学]