辉铜矿和铜蓝的浸出机理研究  

LEACHING MECHANISM OF CHALCOCITE AND COVELLITE

作　　者：路殿坤[1] 蒋开喜[2] 王春[2] 刘大星[2] 

机构地区：[1]东北大学,沈阳110006 [2]北京矿冶研究总院,北京100044

出　　处：《有色金属》2002年第3期31-35,共5页Nonferrous Metals

摘　　要：利用半导体电化学腐蚀原理对辉铜矿和铜蓝浸出机理进行理论分析 ,研究细菌浸出低品位含铜矿石的机理和动力学 ,并对部分原矿和浸出渣进行了光学显微分析。试验结果证实了辉铜矿在浸出过程中产生一系列具有不同组成的中间产物。随着铜硫比的降低 ,中间产物浸出所需的氧化还原电位越来越高 。The mechanism of leaching process of chalcocite and covellite is described theoretically by the principle of electrochemical corrosion of semiconductor The bioleaching mechanism and kinetics of low grade copper ore is also investigated A part of original ore and residue are checked by optical microscope The results show that a series of mediate leaching products with different composition appears during the leaching of chalcocite The redox potential for mediate product leaching rises gradually and leaching of copper becomes more difficult with the decrease of Cu/S ratio

关 键 词：辉铜矿 铜蓝 氧化还原电位 动力学 浸出机理 

分 类 号：TF811[冶金工程—有色金属冶金]