太阳能级硅中轻质元素(C,N,O)研究进展  

Research Progress on Light Elements(C,N,O)in Solar-grade Silicon

作　　者：谭毅[1,2] 秦世强[1,2] 石爽[1,2] 姜大川[1,2] 李鹏廷[1,2] 李佳艳[1,2] 

机构地区：[1]大连理工大学材料科学与工程学院,辽宁大连116024 [2]大连理工大学辽宁省太阳能光伏系统重点实验室,辽宁大连116024

出　　处：《材料工程》2017年第2期112-118,共7页Journal of Materials Engineering

基　　金：高等学校博士学科点专项科研基金(20130041110004)

摘　　要：C,N,O等轻质元素的存在对太阳能级晶体硅材料的性能有着广泛影响,而硅材料作为太阳能电池的主要原材料,其纯度对电池的电学性能有着决定性作用。本文总结了晶体硅中C,N,O元素的存在形态、分布规律、形成机制及工艺控制等的研究进展,并对未来硅中轻质元素的研究进行了展望,使用各种提纯工艺的优势交叉互补来控制及去除硅中的杂质值得研究及关注,对硅中C,N,O元素的交互作用的深入研究也将会对硅材料质量的提高有着积极作用。The presence of light elements like C,N,O has wide influence on the properties of solargrade silicon.Since silicon is the dominating raw material of solar cells,the purity of crystalline silicon has significant influence on electrical properties of solar cells.In this paper,the research progress on carbon,nitrogen and oxygen on the presence,distribution,formation mechanism and process control was summarized.An outlook for light elements research in silicon was also proposed,the combination of different purification methods to control and eliminate impurities in silicon is worth paying attention to investigate,and the further research on the behavior of C,N,O in silicon can also improve silicon quality.

关 键 词：轻质元素 太阳能级硅 杂质 

分 类 号：TF131[冶金工程—冶金物理化学]