金刚石线切割太阳电池多晶硅片绒面的分析  

Analysis on diamond wire sawn solar cell muticrystalline silicon wafers

作　　者：王发辉[1] 

机构地区：[1]新余学院新能源科学与工程学院,江西新余338004

出　　处：《电源技术》2017年第2期234-235,249,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金(51164033;51664047);江西省自然科学基金(20132BAB206021);江西省教育厅科技项目(GJJ151207;赣教技字12746;12745;12748)

摘　　要：采用HF/HNO_3酸刻蚀液对金刚石线切割太阳电池多晶硅片进行制绒研究,对比分析了刻蚀液浓度、刻蚀时间以及以H_2O和CH_3COOH为添加剂等因素下的多晶硅片绒面形貌特性。结果表明:富HF体系,金刚石线切割多晶硅片表面的划痕加深,但其表面刻蚀效果较好;富HNO_3体系,金刚石线切割多晶硅片表面往复纹微消除,而表面制绒效果不佳;然而,随着时间延长,富HF和富HNO_3刻蚀多晶硅片表面腐蚀坑均由较小凹坑状逐渐变大,最终形成条状腐蚀坑;与H_2O为添加剂相比,CH_3COOH下的硅片表面腐蚀坑分布较均匀。研究成果为金刚石线切割技术应用于多晶硅片提供了技术支撑。Diamond wire sawn solar cell muticrystalline silicon wafers was prepared through used HF/HNO3 acid etching. The surface characteristics of diamond wire sawn muticrystalline silicon wafers were contrastive analyzed in the different factors such as Etching concentration, etching time and H2O, CH3COOH as additives. The results show that, in the HF-rich etching system, the scratch on the diamond wire sawn muticrystalline silicon is deepen, but the effect of surface etching is better. In the HNO3-dch etching system, the saw marks on the diamond wire sawn muticrystalline silicon were removed, but exhibited poor surface etching effect. However, with the extension of time, the small corrosion pits was gradually larger on the surface of muticrystalline silicon, and eventually form the strip corrosion pits in the HF-rich etching system and HNO3-rich etching system. Compared with the H2O, the corrosion pits on the surface of silicon wafer were uniform in the CH3COOH. The results provide the technology foundation for the diamond wire sawn muticrystalline silicon wafers.

关 键 词：金刚石线切割 酸刻蚀 绒面形貌 

分 类 号：TM615[电气工程—电力系统及自动化]