低垂直发散角高亮度光子晶体半导体激光器  

Low Vertical Devergence Angle and High Brightness Photonic Crystal Semiconductor Laser

作　　者：周旭彦 赵少宇 马晓龙[1,2,3] 刘云[1,2,3] 李伦华 林羽喆[1,2,3] 齐爱谊[1,2,3] 王宇飞[1,2,3] 渠红伟[1,2,3] 郑婉华[1,2,3] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083 [2]中国科学院半导体研究所固态光电信息实验室,北京100083 [3]中国科学院大学未来技术学院,北京101400

出　　处：《中国激光》2017年第2期134-143,共10页Chinese Journal of Lasers

基　　金：国家自然科学基金(61025025;61137003)

摘　　要：针对现有边发射半导体激光器远场发散角大、光束质量差等问题,引入光子晶体人工微结构实现模式扩展和模场分离,改善了单芯片半导体激光器的性能,实现了高亮度高光束质量的激光输出。理论分析并模拟了光子晶体半导体激光器对光场的调控机制,并介绍了几种典型的光子晶体半导体激光器。在光子晶体激光器实现低垂直发散角的基础上,设计了不同的结构实现了大功率、单模、高亮度等特性的输出。实验验证了光子晶体能带效应在提高半导体激光光束质量、提高亮度等方面的调控作用,其能够突破普通半导体激光器面临的限制,有助于半导体激光更有效地应用在光纤激光器抽运和激光加工等领域,为半导体激光的直接应用奠定了基础。In order to solve the problem of large vertical divergence angle of semiconductor laser and poor beam quality, the photonic crystal is introduced to realize mode extension and separation, which improves the properties of laser diode and realizes high brightness and high beam quality laser output. Photonic crystal working principle is theoretically analyzed and simulated as well, and some photonic crystal semiconductor lasers with different properties are introduced. Based on the photonic crystal semiconductor laser, some structures are integrated to get high power, low vertical divergence angle and high brightness output beam. Experimental results prove that the band gap effects of the photonic crystal improve the quality and brightness of laser beam, and break through the limitation of normal semiconductor, which help the semiconductor laser effectively used in the fiber laser pump and laser processing, and establish the foundations for the direct application of semiconductor laser.

关 键 词：激光器 半导体激光器 光子晶体 低垂直发散角 高亮度 

分 类 号：TN248.4[电子电信—物理电子学]